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bulk cmos process 体效应互补金属氧化物半导体工艺
It is designed and fabricated with the 0.25 um CMOS process. 年;设计及生产工艺为0.
The sensor was fabricated by standard CMOS process plus some post-processing. 传感器采用标准CMOS工艺与后处理工艺相结合的方式制造。
The 1000Base-T PHY chip was taped out with CMOS process, 208 pins QFP. 本电路参加了 CMOS工艺流片，整个1000Base-T PHY芯片采用208管脚QFP封装。
The layout was designed with L-EDIT and the wafers were fabricated with double-polysilicon, N well CMOS process. 利用L-EDIT进行全定制版图设计，利用双层多晶硅N阱CMOS工艺进行芯片制造。
In this thesis, a low power 12bit 80MS/s pipelined ADC is designed in TSMC 3.3V 1P5M 0.25um CMOS process. 本文基于TSMC 3.;3V 1P5M 0
And finally, a clock generator based on the 3rd order CPPLL is fully designed with UMC 0.25 CMOS process. 最后，采用UMC 0.;25 CMOS工艺技术设计了一个用作时钟产生的三阶电荷泵锁相环。
In this thesis, three low noise amplifiers (LNAs) are designed, and implemented using CMOS process. 在这论文中，我们利用金氧半互补式(CMOS)制程来设计及实现了三个低杂讯放大器。
The standard CMOS process and integrated TTL drivers contribute to a reduced solution cost and PCB board space compared to most GaAs-based solutions. 由于采用标准的CMOS工艺和集成的TTL驱动器,所以比大多数基于砷化镓的解决方案降低了器件的成本和占用的印制电路板(PCB)面积。
This Schmitt trigger circuit can be suited to the deep sub-micron CMOS process and used to get rid of the noise on the input pad of the chip. 利用动态体偏置实现的施密特触发器可以适用于深亚微米芯片 ;可广泛用于滤除芯片的输入噪声 ;提高输入信号的信噪比 .
With the development and progress of CMOS process, the high-speed circuits should be realized by BJT in the past are gradually replaced by CMOS. 摘要:随著CMOS制程技术的发展与进步，以往需要以BJT实现的高速电路也渐渐被整合性较高的CMOS所取代。
In the second part, the transimpedance amplifier employing current minors is studied.It is implemented using TSMC 0.35 m CMOS process. 第一部份针对光二极体式光电流侦测电路，设计光电流搭配电流镜架构来侦测放大光电流，利用模拟来分析其特性。
The students must learn how to use a TCAD tool to simulate a CMOS process and get the device electrical characteristics. 课外科技活动和社会实践的教学活动中能力培养的安排及要求。
We provide the technology which develop the key process module of OUM cell and good integration with traditional CMOS process. 本所的相变化记忆体元件制程技术，除了开发记忆胞的关键制程模组外，更具有与传统CMOS制程之良好相容性。
This paper aims at designing a relaxation oscillator which is used in the readout circuits for silicon capacitive accelerometers with CMOS process. 采用CMOS工艺设计出应用在微硅电容加速度传感器单片测试电路中的弛张振荡器即是本文的主要研究目的。
This process is one big area high voltage CMOS process which is transferred from the customer and now put in mass production in ASMC. 本工艺是通过技术转移在上海先进半导体公司开发的一种CMOS工艺，本工艺具有大芯片高栅压的特点。
The PLL is fully integrated onto TSMC 0.25um CMOS process to achieve wide operating frequency, low power and especially low jitter performance. 本论文所提出的锁相迴路是用台湾积体电路公司0.;25微米互补式金氧半导体制程设计来达到工作频率范围广，低功率，特别是低相位抖动的特性。
This ADC adopts 9 stage , 1.5bit/stage pipeline architecture, with 10 bit resolution and speed no less than 20MS/s, implemented in CSMC 0.60um DPDM CMOS process. 本文设计的是10位20MHz流水线结构的模数转换器;设计基于CSMC 0.;6um CMOS混合信号工艺。
Do they charge carriage by bulk? 他们是否按体积计算运费？
We have developed in this work an ultrasensitive ISFET device by using a conventional CMOS process, with the performance comparable to those of nano-wire FET (NWFET). 我们在此篇论文中利用传统CMOS制程开发出极灵敏的离子电晶体感测器，而能够达到与奈米金线场效电晶体相同的感测灵敏度(NWFET)；