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Characterization of Schottky Barrier Contact Between Ultra Thin Epitaxial CoSi_2/n|Si 超薄外延CoSi_2/n-Si的肖特基势垒接触特性
Schottky barrier contact 肖特基势垒接触
Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基势垒雪崩光电探测器已研制成功。
Using the processes with lowest formed damage and AuGeNi/Au/GaAs ohmic contact, Al/AlGaAs Schottky barrier, polyimide pro-tecting film, we have developed the InGaAs/AlGaAs PM-HEMT. 采用低应力、低损伤工艺程序,以AuGeNi/Au形成源漏欧姆接触,Al形成栅肖特基势垒接触,聚酰亚胺介质为钝化膜,制成了InGaAs/AlGaAs赝配HEMT。
As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低电阻率的优点 ,采用 Ti制作肖特基二极管。
The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。
Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 还有另一个目的是在半导体材料与有源电极之间形成肖特基势垒。
When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 当我们在矽基板上形成矽化镍时，将会有萧特基接面存在其间。
The electron beam induced current (EBIC) character of palladium silicide-silicon (P-type)Schottky Barrier Diode (SBD) is observed. 本文用EBIC法对SBD元件进行了观测。
When the Schottky barrier height(Eb)is higher than 0.6 eV,any increase in Eb can result in apparent reduction in the DSSC maximum power output. 当TiO2/TCO的肖特基势垒(Eb)大于0.;6eV时;DSSC的最大功率输出值随Eb的增大而明显降低。
The typical structure and fabrication technology of the iridium silicide Schottky barrier infrared detectors(IrSi-SBIRDs)are discussd. 本文讨论了硅化铱肖特基势垒红外探测器(IrSi-SBIRD)的典型结构和其制作技术;
The mean Schottky barrier height and lowest ideality factor were found to be 1.24eV and 1.03, respectively, as measured by (I - V). 电流 -电压测量得到肖特基势垒平均高度和理想因子分别为 1 .;2 4 e V、1
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二极管D1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
One proposed that the formation mechanism of IrSi/Si Schottky barrier should be correlated with the chemical bonds between IrSi and Si atoms at interface. 提出了IrSi/Si肖特基势垒形成机理与界面处IrSi和Si原子的化学键密切相关。
The structure features operation principle of charge sweep device(CSD) and their application in the Schottky barrier infrared focal plane array(SBIFPA) are reviewed in this paper. 本文介绍了CSD图像传感器的结构、特点、工作原理及其在肖特基势垒红外焦平面列阵(SBIFPA)中的应用情况。
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管,大大减小了输出整流损耗,效率相对提高。
The Schottky barrier height is increased, and the ideality factor is decreased to unity with decreasing the Pd grain size and particle size distribution. 论文后段则探讨以无电镀法制备之钯/砷化镓以及钯/氧化层/砷化镓元件于氢气感测效果之差异，并探讨不同钯膜微结构对于氢气感测性能之影响。
The circuit is composed of four doubler circuits using four Schottky barrier diodes (HP-HSMS-8102). A RF-to-DC conversion efficiency of 45.4% has been achieved at an input power level of 24.5 dBm with 300W DC load. 本文设计的整流装置采用四个HP-HSMS-8102肖特基二极管组成四个并联的倍压电路;在24.;5 dBm输入功率下(直流负载为300W)测得其整流效率达到了45
A systematical and intensively study of Schottky barrier and the whole device of GaAs MESFET has been presented in this paper. To the weaknesses of conventional method , the author put forward the Temperature Ramp Measurement (TRM) . 本实验对GaAs MESFET栅Schottky势垒接触及整体器件进行了较为系统和深入的研究，针对目前常规评价方法不能适应当前微电子器件快速发展的需要而出现的诸多问题，提出了恒定应力下的温度斜坡法（简称TRM法），动态观察和分析器件退化全过程，并应用此方法成功给出了实验样品的寿命预测值和失效率。