Using the processes with lowest formed damage and AuGeNi/Au/GaAs ohmic contact, Al/AlGaAs Schottky barrier, polyimide pro-tecting film, we have developed the InGaAs/AlGaAs PM-HEMT.

• 采用低应力、低损伤工艺程序,以AuGeNi/Au形成源漏欧姆接触,Al形成栅肖特基势垒接触,聚酰亚胺介质为钝化膜,制成了InGaAs/AlGaAs赝配HEMT。