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semantic memory cell [计] 语义存储单元
A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
Another useful distinction can be made between two dimensions of long-term memory: semantic memory and episodic memory. 陈述性记忆又分为两类: 语意记忆和事件记忆。
Semantic memory is our knowledge for meaningful information, which is not tagged in memory for a time or place when we learned it. 语意性记忆是我们对有意义的信息的认识，当我们在学习的时候并没有在记忆中标上时间和地点。
Semantic memory is our knowledge for meaningful information,which is not tagged in memory for a time or place when we learned it. 语意性记忆是我们对有意义的信息的认识，当我们在学习的时候并没有在记忆中标上时间和地点。
Alzheimer's disease starts with episodic memory, frontotemporal dementia defects semantic memory and Lewy's body dementia impairs working memory. 在额显叶型失智症，语意记忆的障碍较显著，事件记忆反而维持较好；在路易氏体失智症，工作记忆的缺损最明显。
Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
By means of the wonderful finding, a new study area is developed for exploring the structure and function of semantic memory system. 这一奇特现象的发现,为研究人类的语义记忆系统的结构和功能开辟了一个全新的领域。
Objective: To analyze the features of auditory word comprehension impairment in patients with Alzheimer disease(AD),find out the mechanisms in semantic memory deficit. 目的:分析阿尔茨海默病患者听觉字词理解障碍的特点,探讨其语义记忆损害的机制。
This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
The role of long-term semantic memory in the subliminal semantic priming was explored by testing whether non-practiced targets can be primed by different word frequency prime stimuli. 本文通过检测启动刺激的词频对阈下启动效应的影响,探讨了长时语义记忆在阈下语义启动中的作用。
US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
Based on the unified ferroelectric device model which is applied practically to the design, the 2T 2C configuration of the ferroelectric DRO memory cell is discussed in detail. 基于被应用于实际设计之中的统一的铁电器件模型，详细讨论了2T?2C组态的铁电破坏性读出存储器单元的设计。