Based on the unified ferroelectric device model which is applied practically to the design, the 2T 2C configuration of the ferroelectric DRO memory cell is discussed in detail.

• 基于被应用于实际设计之中的统一的铁电器件模型，详细讨论了2T?2C组态的铁电破坏性读出存储器单元的设计。