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reverse bias heating 反偏置加热
The presence of a large density of contaminant causes anomalous increases in the diode current with increasing reverse bias. 大量沾污也会使二级管电流随反向偏压的增加而呈现反常的增大。
This condition, known as reverse bias, is not conducive to current flow through the junction. 这种叫做反向偏置的状态不利于电流穿越结。
The photo-current was found to closely follow the eletro-absorption at large reverse bias values. 在很大的反向偏压下,光电流紧随着电吸收发生变化。
One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二极管质量的一个方面就是在规定的反向偏置电压下的泄漏电流。
During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT关断期间，IGBT的栅极需加反向偏置电压，避免IGBT的误动作。
The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置电压的幅度来控制。反向偏置电压越大增益就越高。
The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer. 位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。
The silicon light emitting device also can be used as a photoreceiver under reverse bias, receiving the light emitted from the other one. 此发光元件在反偏下也可当成光接收元件，接收来自同结构顺偏元件所发出的光。
The currents of the detectors at no bias voltage and reverse bias voltage of 2V were obtained when they were illuminated by light beams of 362nm and 368nm scanning across the active region of the detectors, respectively. 分别用362nm和368nm光束对有源区进行横向扫描,得到了光照不同部位时探测器在无偏压、2V反向偏压下的电流。
For Au/Ge-Si02/p-Si andAu/Si-SiO,/p-Si structures, they emit EL peaked at 5lOnm when forward biaseswere greater than 6V and 6.5V, respectively, while no detectable lightemission can be observed under reverse bias. 对于Au/Ge-SiO_2/p-Si和Au/Si-SiO_2/p-Si结构，当所加正向偏压分别高于6V和6.;5V时都发出肉眼可见的EL，峰位均在510nm处；在反向偏压下，没有光发出。
The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction. 利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/(C2)-V和1/(C3)-V关系图。
Secondly, the SiGe-based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied. 第二部分则利用设计之矽锗基金氧半元件逆向操作，以光照产生光电流，观察其作为光侦测器的特性。
Zero adjustment function,forward adjust is forward biased,reverse adjust is reverse biased. 零点调整功能，顺时针调整可以偏负，逆时针调整可以偏正。
D1 is a protection diode that prevents the be junction of Q2 from be reverse biased. 如果仅仅是为了保护，完全可以在Q2发射极串联一个二极管代替，
Heat sometimes causes a prickly rash on the skin. 热有时使皮肤上生剌痛的疹子。
Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions. 传统的反向偏压射极-基极接面驱迫所造成的热载子会在靠近基极和射极接面以及隔离基极-射极的绝缘层上产生接面陷阱(traps)和带电荷的接面能态(interfacestate)，而影响其直流特性上的电性反应。
This is a highly efficient new heating system. 这是个高效的新取暖系统。
The committee is of a/has a conservative bias. 委员会有一种保守的偏见。
The system works on the principle that heat rises. 该项装置是按照热力上升的原理运转的。