Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions.

• 传统的反向偏压射极-基极接面驱迫所造成的热载子会在靠近基极和射极接面以及隔离基极-射极的绝缘层上产生接面陷阱(traps)和带电荷的接面能态(interfacestate)，而影响其直流特性上的电性反应。