The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction.

• 利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/(C2)-V和1/(C3)-V关系图。