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- This CMOS device includes an input shift register, accompanying data latches, and 16 MOS constant current sink drivers. CMOS器件包含一个输入移位寄存器、随附的数据锁存和16个MOS恒流灌电流驱动器。
- The "three-path" latch-up window model is simply based on the analysis of CMOS device latch-up circuit model. 在分析CMOS器件闭锁电路模型的基础上,简要介绍了“三径”闭锁窗口模型的有关情况。
- To predict the circuit performance, HEMT and CMOS device models used in the designs are described. 为了准确预测电路的效能,首先描述了HEMT及CMOS的元件模型。
- The system can be integrated in CMOS device in order to achieve the integration of photoelectron equipment. 该系统可以集成在很小的CMOS器件上,实现光电子器件的集成化,有着广泛的应用前景。
- The used bulk-driven CMOS device in subthreshold is exactly deigned in the operation amplifier for low-voltage and low-power. 本体推动之CMOS元件工作于次临界区确实可设计于低电压、低功率之运算放大器。
- The power leakage principle of CMOS device is introduced, which is in direct portion to Hamming distance processed in gate. 文章首先简单分析了CMOS器件工作时产生功耗泄漏的机理,即与门电路内处理数据的汉明距离成正比;
- CMOS device dimensions scale down to the very deep submicrometer.ICs are going towards higher density, higher speed and lower power dissipation making new challenges on IC test and design for test. 摘要CMOS器件进入超深亚微米阶段,集成电路(IC)继续向高集成度、高速度、低功耗发展,使得IC在测试和可测试性设计上都面临新的挑战。
- As reducing the gate length toward to submicron CMOS device, selecting a gate dielectric material to improve the electric characteristics and been demonstrated by using ISE-TCAD simulation tool. 从改变氧化层材料与线宽之方式对元件性能的提升并藉由ISE-TCAD 模拟工具来探讨。
- This thesis reports an analysis of intrinsic and fringing capacitance behavior in 100nm SOI (silicon on insulator) CMOS devices. 摘要:本论文中提出了100奈米绝缘体上矽金氧半元件的本体和边缘电容分析。
- To verify the model, a test circuit has been designed to simulate parasitical latch-up paths in CMOS devices and relevant parameters are reported. 为了实验验证该模型,设计了实验电路以模拟CMOS器件的寄生闭锁路径,给出了相应的参数。
- When trying to explain the latch-up window phenomena in CMOS devices induced by radiation, the so called "three-path" latch-up window model is provided. 摘要在解释CMOS器件辐射感应的闭锁窗口现象时,提出了所谓的“三径”闭锁窗口模型。
- Abstract: When trying to explain the latch-up window phenomena in CMOS devices induced by radiation, the so called “three-path” latch-up window model is provided. 摘 要: 在解释CMOS器件辐射感应的闭锁窗口现象时,提出了所谓的“三径”闭锁窗口模型。
- By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT=1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. 在国内首次将等效氧化层厚度为1·7nm的N/O叠层栅介质技术与W/Ti N金属栅电极技术结合起来;用于栅长为亚100nm的金属栅CMOS器件的制备.
- A display device that uses a cathode ray tube. 一种使用阴极射线管的显示装置。
- If took ten men to wrestle the device into place. 用了10个人才把那台装置挪动到位。
- Nano technology will soon pervade the world. 奈米科技将很快普及于全世界。
- A device used to modulate an electromagnetic wave. 调制器用以调制电磁波的装置
- Auxiliary Nano Pump rigs are now stacking nerfed. 辅助纳米聚合器现在不能重叠。
- She got the information by some device. 她运用某种手段获取了情报。
- SHENZHEN JUNYE NANO MATERIAL CO., LTD. 深圳市尊业纳米材料有限公司。