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RF power MESFET 射频功率金属半导体场效应晶体管
The power of the modulated carrier wave is increased by the RF power amplifier. 射频功率放大器增加了调变载波的功率。
Therefore for to output RF power, 13.5 VDC must be applied to this pin. 因此为了获得RF的功率输出，必须在这个脚上加入13.;5V的电压。
Both an RF power analyzer and a spectrum analyzer are essentially specialized superheterodyne receivers. 功率分析仪和频谱分析仪都本质上都是超外差接收机。
The comparison is carried out under the same of RF power radiated from the array aperture. 比较是在相同的阵列天线口面辐射功率条件下进行的。
Steve C. Cripps, RF Power Amplifier for Wireless Communications, Artech House, 1999. 参考文献[1]袁杰，高电电路分析与设计(二)，全威图书有限公司，2001。
Rf power pre-alarm(under the attenuation threshold with "RF "LED flashing on the amplifier display. 射频功率预报警(在衰减极限之下;用"射频"发光二极管在放大器显示上闪烁.
It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
The main components in a test system may include DC bias, DC measurement, RF power meter, network analyzer, RF sources, and other instruments. 一个测试系统中的主要部分可能包括直流偏压、直流测量、RF功率计、网络分析仪、RF源，以及其它仪器。
The influence of chamber pressure,gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched. 结果表明,通过对反应室压力、刻蚀气体流量和射频功率的调节,可以降低微负载效应的影响,得到良好的刻蚀均匀性。
Operating conditions including RF power, carrier gas pressure, model of nebulizer, Uranium concentration of sample, dwell time, etc are optimized. 对高频发生器入射功率、载气压力、雾化器类型、最佳铀含量范围、通道停留时间、数据采集时间和测量数次等进行优化，得到了优化的操作条件。
The relation between etching rate, sidewall roughness and RF power and Oxygen rate is deeply investigated by implementing careful research on RIE. 在RIE中，离子轰击的作用，会在波导侧壁形成起伏结构，增加了器件的散射损耗。
Abstract: In this paper a new idea for beam-prebunching in RFA was proposed.Without any applied RF power source, beam prebunching can be carried out. 摘要：提出一个可用于射频加速装置预聚束的新机理, 即束腔共振场聚束。
In this thesis, we also discussed and analyzed this practical reliability mechanism in SiGe HBTs, especially for its RF power applications. 这个接近实际操作下的热载子分析，也是本论中高频可靠度分析的一项重要主轴，尤其是在高频功率上所造成的影响。
A high efficiency dual-band RF power amplifier has an output and/or input of a high frequency transistor well terminated at the second harmonic frequency for dual-band operation. 本发明乃一种高效率双频射频功率放大器，提供高频电晶体的输出端与?或输入端于双频操作中有良好的二阶谐波终止。
The polarizer is aligned along one data stream of the pol-muxed RZ-DPSK channel and thus the RF power increases with the accumulated DGD, which can be used for monitoring. 调整偏振片的方向去对到偏振合并调制讯号中的一路偏振方向，然后所量到的电功率随著所累积的偏振色散增加，这个变化的趋势便可以使用来做监测的功能。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel . 模拟分析表明,采用该结构,器件的雪崩击穿电压能提高到理想平行平面结的90%25以上,器件的大电流特性和频率特性也有所改进。
Etch rate and selectivity are examined as a function of SF6, flow, O2 flow, CHF3 flow, pressure and the RF power in order to optimize etching condition. 为了优化刻蚀条件，将刻蚀速率和选择比表示为SF6、O2、CHF3各自的流最以及气压和射频功率的函数。
We show monitoring results for an 80-Gb/s pol-muxed RZ-DPSK channel, in which the monitor consists of a polarizer, low-speed detector, and RF power meter. 监测器包含偏振片、低速光接收器、电讯号功率量取器。
In order to control fsk communication, the system uses wireless data transceiver CC1000, which can easily be programmed for RF power, transmit/receive mode and data format. 本系统采用无线数传芯片CC1000，实现了射频功率、接收/发送模式和数据格式等的软件编程，从而达到了模块FSK通信的可控性。