The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .

• 模拟分析表明,采用该结构,器件的雪崩击穿电压能提高到理想平行平面结的90%25以上,器件的大电流特性和频率特性也有所改进。