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wurtzite quantum well wire 纤锌矿量子阱线
We have studied the cyclotron-resonance frequency of a strong-coupling magnetopolaron in the quantum well wire with the use of variation method of Pekar type. 摘要采用变分法研究了量子阱线中强耦合磁极化子的迴旋共振频率。
Shape-independent Scaling Rule in Quantum Well Wires 量子线中形状独立的度规法则
For quantum structure lasers, including quantum well, quantum wire and quantum box lasers, a simple method is presented to obtain the optimized structure of the active region for low threshold condition. 针对低阈值半导体量子结构激光器（简称量子结构激光器），包括量子阱、量子线和量子点结构，给出了一个完整简便的方法用以优化设计最低阈值条件所需要的有源区结构。
Laser Diodes : Feedback and stimulated emission. Cavity design; double heterostructure concept. Quantum well, wire, dot active regions. Strained layers; pseudomorphic active regions. 回馈与受激放射。共振腔设计，双异质结构的概念，量子井、量子线与量子点的主动层。应变层，假晶材料的主动层。
Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文张福厚;宋珂;邢建平;郝修田;曾一平.
Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文王得勇;刘杰;贾金锋;刘洪;薛其坤.
E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
New progress of exciton condensation in coupled quantum wells[J]. 引用该论文闫占彪;郭震宁.
Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文谭鹏;路洪.
Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。
Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射：双异质结构，量子井，多重电极，面发射。
InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比，在相近的输出功率下，器件的光谱宽度从18nm提高到了37nm。