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thin film quality 薄膜质量
Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT. 与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。
The surface roughness of CVD diamond thin film coated tools and cutting parameters are key factors to influence the surface quality of workpiece. CVD金刚石薄膜刀具的表面粗糙度及加工过程中的切削用量是影响加工工件表面质量的关键因素。
Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
The solid ink roll be uses in the machine, used for plastics thin film, paper quality etc. material surface prints to make the date of production, batch number...etc marking. 详细说明：产品用途及特点:固体墨轮配套于墨轮机使用，用于塑料、薄膜、纸质等材料表面印制生产日期，批号等标识。
This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
The advantages of microcap are superior to the thin film poly-silicon made by the surface micromachining technique on the quality and mechanical properties. 藉由此电铸技术所制作的微金属帽盖与微机械加工技术所制作的薄膜聚合矽而言，微电铸技术制程优点多且品质较好。
Design of Interleaver with Cascaded Thin Film Filter[J]. 引用该论文陈海星;顾培夫;李海峰;章岳光;沈伟东.
Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
Nanocomposite thin films PT／PEK-C were prepared. 制备了纳米复合材料薄膜PT／PEK-C。
Thin film transistor(TFT)is one type of field effect transistors(FET). 薄膜晶体管(TFT)是众多场效应晶体管(FET)中的一种。
Cadmium sulphide or cadmium selenide in polymer based thin film transistor. 聚化合物薄膜电晶体内的硫化镉或硒化镉。
The two pieces being cemented together with a thin film of Canada balsam. 再将这两块晶体用一层加拿大树胶薄膜粘合在一起。
Lin Yong Chang:Optics of Thin Film, Coating Techniques, Display Techniques. 林永昌：薄膜光学，薄膜技术，显示技术。
To analyze the relationship between CR film quality and different exposal doses. 分析不同的曝光条件对于cr影像质量的影响。
The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively. 采用原子力显微镜(AFM)、X射线衍射(XRD)、反射高能电子衍射(RHEED)和X射线光电子能谱(XPS)等表征方法,对碳化层的质量和3C-SiC薄膜的结构进行了表征。