The quality of buffer layer and thin films was analyzed by AFM, XRD, RHEED and XPS respectively.

• 采用原子力显微镜(AFM)、X射线衍射(XRD)、反射高能电子衍射(RHEED)和X射线光电子能谱(XPS)等表征方法,对碳化层的质量和3C-SiC薄膜的结构进行了表征。