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By the use of temperature characteristic of the semiconductor PN junction thermocouple cold end compensating circuit was designed. 利用晶体管PN结温度特性设计出热电偶冷端补偿电路,并对常用热电偶冷端补偿方法进行比较分析。
Discussion on contact potential of a semiconductor pn junction 对半导体pn结接触电势的一个讨论
Cold End Compensating to General Thermocouples Based on Temperature Characteristic of the Semiconductor PN Junction 基于晶体管PN结温度特性的热电偶冷端补偿
semiconductor pn junction 半导体pn结
In the course, the formula of PN junction as a sensor is corrected on the basis of the variation of the width of the semiconductor forbidden with temperature. 在分析过程中，考虑了半导体材料禁带宽度受温度变化所产生的影响，进而对PN结的传感理论进行了修正。
Study on overlapping principle of PN junction in nonlinear zone of. 光电池非线性区PN结光生伏特效应的研究。
But linking the two semiconductors, among them the formation of a "PN junction. 但这两种半导体连接起来的时候，它们之间就形成一个“P-N结”。
From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained. 通过测量结果和计算结果的归一化比较，获得了其表面复合速率。
A Study on the Si Color Sensor with Double PN Junction for Panchromatic Wave Band[J]. 引用该论文韦冬青;陈炳若;钟茗;李云虎;杨雨佳.
He Ne laser speckle photography technology can measure the temperature of PN junction of the Laser diode in line,for controlling the emit wavelength. 用He?Ne激光束的散斑技术可以实时测量激光二极管PN结的温度，达到控制其发射波长的目的。
P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
Based on the systematic study and analysis, alight spot scanner photo-current (PC) measurement technique was set up to measure the interface properties of silicon pn junction. 摘要通过系统的研究分析，建立了应用光探针的光电(PC)测量方法，应用镜像法和点源产生近似原理建立了物理模型，并进行了系统的理论分析。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction. 为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon pn junction protected by organic materials or inorganic passivation films were measured. 采用此方法，测量了台面型高压硅半导体器件的无机钝化和有机保护界面的表面复合速率。
With the help of the PN junction theory and the transistor principle, the author analyzes the principle of operation of the simulated multiplier working in the state of stronger signal, and concludes its related formula in this state? 本文利用pn结理论及晶体管原理来分析工作在较大信号下模拟相乘器的工作原理,推导出它工作于输入较大信号状态下的输出关系式。
The experiment principle is introduced to verify volt-ampere relation of PN junction characteristic experiment. The data measured in the experiment is the data of each step. The final data,curve,and the source code will be provided altogether. 介绍了验证pn结伏安关系特性实验的实验原理,对实验测得的数据进行处理,给出了每一步处理的数据和最后结果数据、曲线,提供源代码。
The experiment principle is introduced to verify volt ampere relation of PN junction characteristic experiment. The data measured in the experiment is the data of each step,the final data,curve,and the source code will be prouided altogether. 介绍了验证PN结伏安关系特性实验的实验原理 ,对实验测得的数据进行处理 ,给出了每一步处理的数据和最后结果数据、曲线 ,提供源代码
A new method of measured breakdown voltage V B of PN junction by measuring C V characteristic of PN junction has been presented in this paper. It has got more fine curve of breakdown characteristic than traditional method. 提出了一种通过测量PN结的势垒电容的C－V特性来测量PN结的击穿电压VB的方法，与传统的方法相比它有更精细的击穿特性曲线；
The measured absorption and fluorescence spectra have shown that NO-G2 exhibits nonlinear absorption than BO-G2,owing to the former possessing pn junction and resultant more obvious intramolecular charge transfer. 吸收光谱和荧光光谱证实;NO-G2具有较大的激发态和基态偶极矩差值;存在着明显的分子内电荷转移和非线性吸收.
Due to the introduced PN junction, the photocurrent is made up by both electronic and pole.As a result, the sensitivity and signal to noise ratio are increased, the parasitic capacitance is decreased. 由于引入PN注入结，新型光电器件沟道电流同时存在电子电流和空穴电流，提高了器件的响应灵敏度，避免了大的寄生电容，提高了信噪比。