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Narrow gap reactive ion etching system 狭窄间隙反应性离子蚀刻系统
Triode reactive ion etching system 三极型反应性离子蚀刻系统
Deep Reactive Ion Etching System 深反应离子蚀刻系统
reactive ion etch system 活性离子腐蚀系统
The influence of chamber pressure,gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched. 结果表明,通过对反应室压力、刻蚀气体流量和射频功率的调节,可以降低微负载效应的影响,得到良好的刻蚀均匀性。
The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反应腔拥有在RIE(反应离子刻蚀)模式和等离子刻蚀模式下工作的能力。
Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching (ECR-RIE) equipment to improve its property of weave. 摘要采用微波电子回旋共振等离子体反应离子刻蚀(ECR-RIE)装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described. 介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作。
The arrays were subsequently treated with reactive ion etching (RIE) to slightly reduced the size of the sphere. 制程的开发首先利用黄光微影制作有高低差的沟槽图样，再将单层奈米球排入沟槽之中。
Reactive ion etching (RIE) process utilized to form giant magnetoresistive (GMR) spin valve sensing elements was investigated experimentally. 对巨磁电阻自旋阀磁场传感器制作中的关键技术之一:自旋阀薄膜的反应离子刻蚀(RIE)工艺,进行了试验研究。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave. 采用微波电子回旋共振等离子体反应离子刻蚀(ECR-RIE)装置对牦牛毛纤维进行表面改性,从而改善牦牛毛的可纺性。
A two-dimensional (2D) physical model of reactive ion etching (RIE) which includes isotropic and anisotropic components is presented.The physical model is analyzed. 摘要反应离子刻蚀(RIE)的二维物理模型，包括各向同性和各向异性两部分。
The electron backscatter diffraction technique (EBSD) has been used to measure the microstructure of reactive ion etched(RIE) Al and damascene Cu interconnects, including the grain size, grain orientation and grain boundary characteristics. 利用电子背散射衍射(EBSD)技术;测量了由反应离子刻蚀工艺(RIE)制备的Al互连线和大马士革工艺(Damascene)制备的Cu互连线的显微结构;包括晶粒尺寸、晶体学取向和晶界特征.
Research on Etch Rate of Reactive Ion Etching of GaAs,AlAs and DBR GaAs、AlAs、DBR反应离子刻蚀速率的研究
Reactive Ion Etching of Diamond Films 金刚石薄膜的反应离子刻蚀
reactive ion etch 活性离子腐蚀
reactive ion etch resistance 耐活性离子腐蚀性
Characteristics of Reactive Ion Etching of BST Thin Film BST薄膜的反应离子刻蚀研究
Study on Anisotropic Etching in Reactive Ion Etching of PMMA 反应离子刻蚀PMMA的各向异性刻蚀研究
Please note that the new mechanism means that if you e. G. Exchange ethernet adapters in a running etch system, the new adapter will also get a new interface name. 请注意到,新的机制也代表了如果您像是置换了正在运作中的etch系统上的网路卡,新的网路卡将会拿到一个新的介面名称。