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- p型Si p-Si
- 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 . High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
- 型的 thysanuriform
- 本文还研究了立方相含量与光学带隙的关系，在n型Si(111)片和熔融石英片上沉积出不同体积分数的立方氮化硼薄膜，薄膜的成分由傅立叶红外吸收谱标识； Either the boron nitride (BN) thin films with different cubic phase content were deposited on n-type Si(111) and fused silica substrates by radio frequency(RF) sputtering using two-stage deposition process. The films were characterized by Fourier transform infrared (FTIR) spectroscopy.
- 外型 exterior
- 户型 house type
- 笔型 pen type
- 选型 lectotype
- 整型 integer
- 房型 house type
- 运动型 motile
- 小型汽车 roadlouse
- 基因型 genotype
- 表型 phenotype
- 压型 profiling
- 构型 configuration
- 经济型 economical
- 外型尺寸 external dimension
- 分型 typing
- 型腔 die space
