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- The nanosecond pulsed laser annealing of GDa-Si:H films has been studied by scanning electron microscope,X-ray diffraction and infrared absorption. 本文报道用电子显微镜观察、X-射线衍射和红外吸收谱等方法研究 a-Si:H 薄膜的毫微秒(ns)脉冲激光退火的结果。
- They include laser doping, laser annealing, laser depositing film, solid-phase reaction induced by laser and laser photolithograph. 这些应用大致涵盖激光掺杂、激光退火、激光沉积薄膜、激光引发固相反应和激光光刻等几方面。
- The traditional ways to obtain polycrystalline film include solid phase crystallization (SPC), low pressure chemical vapor deposition (LPCVD) and excimer laser annealing (ELA). 目前常用的几种获得多晶薄膜的方法包括：低压化学气相沉积、固相结晶、准分子激光晶化等。
- The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with squarelattice metal (Cr/Al) pads on top has been substantially improved. 非晶矽在其上设置金属(铬/铝)正方形周期排列经过雷射退火后，可以有效改善所制成薄膜电晶体之电性均匀度。
- The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with metallic (Cr/Al) photonic crystal structure has been substantially improved. 具备金属(铬/铝)光子晶体排列的非经矽经过雷射退火后，所制成之薄膜电晶体之电性均匀度已经被有效改善。
- An excimer laser annealing (ELA) technique can recognize local-high-temperature heating within short duration without the underlying damage, proposed to enhance the crystallinity of films. 准分子雷射退火(ELA)可在局部区域达到高温而不损伤下层结构，因此可用于增进钛酸锶铅薄膜的结晶性。
- CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON 离子注入硅Nd-YAG连续激光退火
- Point Defects in Si Resulting from Laser Annealing 硅中激光辐照引进的点缺陷
- surface free technology by laser annealing 激光退火表面释放技术
- CW CO_2 laser annealing of arsenic implanted silicon 硅中注砷的连续CO_2激光退火的研究
- STUDIES ON PULSED LASER ANNEALING OF Si IMPLANTED WITH Bi 硅中注铋脉冲激光退火的研究
- Study of p-Si film obtained at low temperature by excimer laser annealing 激光退火法低温制备多晶硅薄膜的研究
- Study on the Property of Implanted Silicon Wafer after CW CO_2 Laser Annealing CW CO_2激光退火后离子注入硅片的性质研究
- DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO_2 LASER ANNEALING 离子注入Si在连续CO_2激光退火时的动态反射特性
- laser annealed silicon on sapphire 激光退火的蓝宝石上硅结构
- Electrical Activity of Diffused Dopes in Surface Layer of Si After CW-CO2 Laser Annealing 硅表层扩散杂质在CW-CO_2激光辐照后的电激活特性
- The study of CW laser annealing of semiconductor by using CW Nd~(3+): YAG laser beam Nd~(3+):YAG连续激光束用于半导体连续激光退火的研究
- There is no single laser fit for all purposes. 没有单一种激光器能适用于各种用途。
- Investigation on elimination of oxidation stacking faults in silicon by CW CO_2 laser annealing 连续波CO_2激光退火消除硅中氧化层错的研究
- How does a laser beam vaporize steel? 激光束是怎样使钢气化的?
