The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with metallic (Cr/Al) photonic crystal structure has been substantially improved.

• 具备金属(铬/铝)光子晶体排列的非经矽经过雷射退火后，所制成之薄膜电晶体之电性均匀度已经被有效改善。