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- epitaxial autodoping 外延自动掺杂
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111)//Si(111). Er2O3薄膜在Si（111）上的外延关系为Er2O3（111）//Si（111）。
- Chapter Two devotes to study the epitaxial growth of ultra-thin metal films. 第三章：用动力学蒙特卡罗模拟研究表面剂诱导外延中二维岛的形成。
- BST thin films sol gel technique epitaxial growth electrical properties. 标 签 薄膜 溶胶-凝胶工艺 外延生长 电性能.
- A complication is that the films are strained and epitaxial, with hardly any defects. 一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。
- Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
- It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS). 也发现藉由条状蓝宝石基板横向磊晶法(LEPS)，可以提升发光二极体的输出功率。
- High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO_(2~)-patterned GaN "template". 在有条状SiO2 图形的GaN“模板”上,侧向外延方法生长了高质量的GaN。
- In this paper, we presented the epitaxial growth of CeO2 thin film on cube textured Ni5W substrates by MOD method. 本文采用MOD方法,以有机铈盐配制前驱溶液,在立方织构的Ni-5%25(原子分数)W基底上制备了CeO2过渡层。
- Bede RADS stands for rocking curve analysis of semiconductor and epitaxial crystal structure by dynamical simulation. 应用Bede RADS软件对半导体和外延层晶体结构的摇摆曲线进行动态模拟。
- The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings. 四探针法用在非常薄的样品，例如外延晶圆片和导电涂层上。
- Meanwhile, the increase of liquid content also can promote both epitaxial growth of template and formation of textures. 同时液相含量的增加还有利于模板的外延生长以及织构组织的形成；
- The silicon carbide epitaxial region may form a non-ohmic contact with the Schottky contact. 碳化硅外延区可以形成一与肖特基接触的非欧姆接触。
- The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111) // Si(111), Er2O3[110] // Si[110]. 其在Si（111）衬底上的外延关系为Er2O3（111）//Si（111），Er2O3[110] // Si[110]。
- A nearly epitaxial InN(001) film on the GaN(001)/sapphire(001) substrates is formed by using the K-cell (In) and HN3. 并探讨氮化铟薄膜的结构与特性分析。
- The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface. X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
- There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation. 在LED生产过程中，主要有外延片生长、芯片和封装三个环节。
- And a brief description of the development of epitaxial The number of shape Combination . 并简单描述数形结合发展的外延。
