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The drain current Ids depends on Vgs with an index of 2.5. 实验结果表明改进的模型更精确;Ids与Vgs的呈2.;5次方的指数关系
A new type of over current protection system of MCCB was Introduced. 介绍了一种新型塑壳断路器的过电流保护系统。
The low quiescent drain current of the device insures good regulation when this method is used. 当这个方法被使用时，设备的低的静止的排水管电流保险好规则。
By these ways, we successfully improve drain current and mobility of NMOS and PMOS. 此外，本论文并探讨应变矽在低温时，不同散射机制对电性的影响。
By this way, we successfully improve drain current and mobility of NMOS into 12% and 6%, respectively. 利用此方法，我们成功提高NMOS的汲极电流与载子迁移率，提升幅度分别为12%25与6%25。
The spectrum of the whole drain current waveform (Fig. 21) is presented in Fig. 23. 全部漏极电流波形产生的电磁干扰频谱（图21）呈现在图23。
As it can be seen the drain current and drain to source voltage slopes can be adjusted simply using the external gate resistor during turn on and off transients. 显而易见，开通和关断过程的漏极电流、漏源极电压变化速率可以简单的通过外置栅极驱动电阻进行调整。
Inverse time current protection is judged by calculating the RMS of current and adding up heating effect. 长延时采用计算电流真有效值,累计热效应判别。
The peak values of the drain current have been varied in discontinuous (2A, 6A, 11A) and continuous (2A, 6A) conduction modes. 漏极的峰值电流被设定为断续电感电流模式下的2安培、6安培、11安培和连续电感电流模式下的2安培。
Instead, pages adopt the current protection level of the database whenever they are written next. 相反,每当下一次写入时,这些页才会采用数据库的当前保护级别。
In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit. 首先通过分析总结典型的短沟MOS器件模型的建模原理和适用范围，建立了适用于深亚微米、超深亚微米LDD NMOSFET的简捷器件模型(Compact model)。
Therefore, we successfully improve drain current and carrier mobility of NMOS, and the increasing rates are 22% and 30% respectively. 利用此方法，我们成功提高NMOS的汲极电流与载子迁移率，提升幅度分别为22%25与30%25。
The current protection focuses on the administrative practice, but conveys no private rights to the right holders. 目前中国进行的主要是行政保护式的公法保护，但在私法保护上却没有什么依据。
A model of drain current degradation of DSM NMOSFET devices induced by HCI and implementation in circuit reliability simulation is proposed. 摘要提出一种深亚微米NMOSFET的热载流子注入下漏电流退化模型及其电路退化仿真方法。
This paper concentrates on the development of 10-35kv adaptive current protection set WXB-32B. 本论文全面介绍了10-35kv馈线自适应保护装置WXB-32B的研制成果。
The analysis of the drain current of the primary switch will be done in the same way. Fig. 21 demonstrates a typical drain current in a DCM flyback. 对一次侧开关的漏极电流进行分析采用相同的方法。图21展示出一个工作于电感电流断续模式反激变换器的典型漏极电流。
Internal circuit protection includes short-to-ground, shorted load, thermal shutdown with hysteresis, and crossover current protection. 内部电流保护包括接地短路、短路负载、因滞后而引起的过热关机与交叉电流保护。
Internal circuit protection includes thermal shut down with hysteresis, transient-suppression diodes and crossover current protection. 内部电路保护包括因滞后引起的过热关机、瞬态抑制二极管及交叉电流保护。
Over current protection circuit design helps to control short circuit in loading and over current promptly to avoid further damage. 过流式保护电路设计,能及时控制负载的短路及过流情况,免除进一步损坏。
The reasons why reverse current protection is not necessary in rectifiers of direct current traction substation are described. 摘要通过分析，阐述了直流牵引变电所内的整流器不必设置逆流保护的理由。