In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit.

• 首先通过分析总结典型的短沟MOS器件模型的建模原理和适用范围，建立了适用于深亚微米、超深亚微米LDD NMOSFET的简捷器件模型(Compact model)。