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- With the increasing of anneal temperature, the resistance of P-implanted TiO2 thin films decrease and their water contact angles fluctuate at 70? 随着退火温度的上升;P注入的TiO2薄膜材料电阻降低;与水的接触角在70度左右波动.
- Varieties of structure and performance on TZM alloy in different anneal temperature are studied through stretch test on room temperature. 通过室温拉伸试验和组织断口形貌观察,研究了TZM合金在不同退火温度下的性能与组织变化现象。
- The specific resistivity changes during the different anneal temperature and the resistance relaxation time with pullin... 分析了热处理对电阻特性影响的机理。
- Abstract: Considering the problem of enhancing infrared transmittance of VO2 film made by the method of inorganic Sol-Gel, the best anneal temperature is proposed. 中文摘要: 针对提高溶胶凝胶法制备VO2薄膜的红外透过率的问题,提出制备时的最佳退火温度。
- Conclusion Utilizing the designated primers combined with the 58.6℃ as anneal temperature, the amplified desired 302bp product , clear and consistent, was a prefer internal reference in quantitative mRNA analysis of cultured lens epithelial cells. 采用本实验中所设计的引物联合58.;6℃退火温度等实验条件所扩增的长度为302bp片段,清晰稳定,是晶状体上皮细胞mrna定量分析中良好的内部参照标准。
- The high rate dischargeability (HRD) of the alloy electrodes increases with increasing of annealing temperature and the alloy annealed at 1173 K is the best. 合金的高倍率放电性能(HRD)随退火温度升高略有增加;在1173K时;合金电极的HRD最好(HRD900=89.;0%25);
- When annealing temperature is above 750 degrees centigrade, it is very ease for a-Si:H thin films to crystallize. 沉积a-Si:H薄膜时的衬底温度越高,得到的a-Si:H薄膜越容易晶化。
- The article introduces a way to confirm suitable annealing temperature of the aluminum alloy. 介绍了一种试验确定铝合金适宜退火温度的方法。
- The effects of annealing temperature on electrochemical performances of the alloy were investigated. 研究了退火温度对合金的电化学性能的影响。
- Results In PCR, the primer for internal reference gene, content of dNTP, and runing cycles affect the products much than the annealing temperature. 结果在pcr反应中,扩增内参照和目的基因的引物比例、底物浓度以及pcr反应的循环次数对产物的影响较大,而退火温度的影响较小。
- The present work is to investigate the effect of annealing temperature Tan on microst-ructure and superstructure of HEPP fibers by FRS-XRSA and SAXS. 本文是继应用WAXD与SAXS研究退火时间对HEPP结构影响后的第二部分工作,即退火温度的影响。 结果指出:FRS-XRSA是研究择优取向聚合物结晶与取向的合理方法;
- The variation of the dangling bonds with annealing temperature in a-Si: F produced by ion implantation is measured by EPR. 本文用电子顺磁共振(EPR)测量了离子注入a-Si:F中悬键密度随退火温度变化的关系。
- The variation of Ni/Ge structure on different orientation substrate as a function of annealing temperature will be shown and discussed. 我们将说明在不同方向的锗基底上会随不同退火之温度而形成不同镍锗化合物并讨论之。
- At the same time, the crystallite size increases and interplanar distance decreases with the increase of annealing temperature. 同时,随着退火温度的升高,晶粒尺寸长大,晶面间距降低。
- It was found the annealing temperature and structure of PP-g-PEG had effect on the diffusion and selective aggregation in PP. 实验发现:温度和分子结构对接枝共聚物在聚丙烯改性体系中的扩散存在影响。
- A stable phase of Er silicide can appear certainly on the Si surface at the annealing temperature higher than a critical value of 400 oC. 退火温度高于临界值400oC时,在Si表面就会形成Er硅化物的稳定相。
- When the annealing temperature is high enough & the time is long enough , the crystal will be re-rime with underlay as new crystal nucleus. 当退火温度足够高、时间足够长时,晶体以衬底为新晶核再结晶。
- A small adjustment will equalize the temperature in the two rooms. 稍作些调节就会使两间房内的温度相等。
- The annealing temperature has significant effect on microhardness of AZ31, however, the time of annealing has no effect. 退火处理温度对AZ31镁合金的硬度值有显著影响,但退火处理时间的影响却不明显。
- Anneal means make harden steel soft and remove brittleness. 退火就是使淬火钢变软并消除其脆性。