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- 报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制. The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported.
- InP衬底 InP substrate
- InP衬底AlAs/In_(0.53)Ga_(0.47)As RTD的研制 Research on InP-Based AlAs/In_(0.53)Ga_(0.47)As RTD
- InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析 AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate
- 衬底妇女紧身胸衣 A foundation garment.
- 衬底点阵 substrate lattice
- 衬底漏电 substrate leakage
- 衬底强度 substrate strength
- 共衬底 common substrate
- 衬底平行度 substrate parallelism
- 衬底切割锯 substrate dicing saw
- 有源衬底 active substrate
- 软衬底 soft substrate
- 铝衬底 aluminum substrate
- Si衬底 Si substrate
- AAO衬底 AAO substrate
- 陶瓷衬底釉 ceramic substrate glaze
- 互连层衬底 interconnection substrate
- ITO衬底 ITO substrate
- 小衬底 narrow filling
