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- 退火温度对铁电薄膜钛酸锶钡的影响 EFFECT OF ANNEALING TEMPERATURE ON FERROELECTRIC BARIUM STRONTIUM TITANATE THIN FILMS
- 采用PLC控制制备铁电薄膜的液态源系统 Controlling Liquid Source System with Ferroelectric Thin Film Preparation by Using PLC
- 电 electricity
- 采用sol-gel工艺低温制备了Si基Bi4?xLaxTi3O12(BLT)铁电薄膜。 Bi4?xLaxTi3O12 (BLT) thin films were prepared on p-Si substrates by using sol-gel method at low temperature.
- PZT铁电薄膜 PZT ferroelectric thin film
- BST铁电薄膜压控微波器件 Voltage Controlled Microwave Electronic Components Using BST Ferroelectric Thin Films
- 用传统固相烧结工艺,制备了纯相的Bi4Ti3O12(BTO)陶瓷,A位掺杂的Bi3.25La0.75Ti3O12(BLT),Bi3.15Nd0.85Ti3O12(BNdT)铁电陶瓷。 Ferroelectric ceramics of Bi_4Ti_3O_(12)(BTO),Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT),and Bi_(3.15)Nd_(0.85)Ti_3O_(12)(BNdT) were synthesized using the solid-state reaction method.
- PLZT铁电薄膜 PLZT ferroelectric thin films
- 铁电陶瓷 ferroelectric ceramics
- 铁电滞后 ferroelectric hysteresis
- 铁电区 [电] ferroelectric domain
- 铁电BLT ferroelectric BLT
- 铁电BNT ferroelectric BNT
- BDTV铁电薄膜 BDTV ferroelectric films
- BST铁电薄膜 ferroelectric thin film
- BYT铁电薄膜 BYT ferroelectric thin films
- BLT铁电薄膜 BLT ferroelectric thin film
- 铋系铁电薄膜 Bi-system thin films
- 铁电铁磁薄膜 biferroic film
- 铁电陶瓷薄膜 ferroelectric ceramics films
