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Features: trench FET Power MOSFET 100% Rg Tested. 特点:沟道场效应管;功率MOS晶体管.
The power MOSFET suffers a peak current of IIN plus IF and a peak voltage of VIN plus VO. 功率MOSFET要承受一个峰值为IIN加上IF的电流还有一个峰值为VIN 加上 VO的电压。
The discussion woudl be centred on more power MOSFET parallel connection,avoiding parasitic oscillation and the measures of anti-interference. 重点讨论了多个功率场效应管的并联，寄生振荡的防止及抗干扰措施。
SJ MOSFET is a new development power MOSFET based on the combination of VDMOS and SJ (Super Junction), and called the new milestone of power MOSFET. SJ MOSFET是由VDMOS结构与超结(SJ)相结合而发展起来的一种新型的功率MOSFET,被称为功率MOSFET的里程碑,有广阔的发展前景,目前在国内尚无产品开发。
The company after incorporating still will surmount two afore-mentioned manufacturers, become the biggest power MOSFET supplier. 合并后的公司还将超过上述两家厂商，成为最大的功率MOSFET供给商。
It is designed with outputs for a direct high current gate drive of an all N-channel power MOSFET three phase bridge with a maximum supply voltage of 38 V. 该产品可为全N通道功率MOSFET三相桥的直接大电流门极驱动提供输出,最大电源电压为38 V。
This constant?current power supply uses a power MOSFET as the current control device, and which uses the principle of negative feedback to adjust and stabilize the output current. 该恒流源采用功率MOSFET作电流控制元件,运用负反馈原理稳定输出电流。
The final control circuit adopts power MOSFET as current control device, which uses the principle of negative feedback to adjust and stabilize output current. 末级电路采用功率MOSFET作电流控制元件，运用负反馈原理稳定输出电流。
Hu Zongbo,Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifier[J].Proceedings of the CSEE,2002,22(3):88-93. [2]胡宗波;张波.;同步整流中MOSFET的双向导电性和整流损耗分析[J]
Hu Zongbo, Zhang Bo.Study on bi-directional conductibility and power loss of power MOSFET in synchronous rectifiers[J].Proceedings of the CSEE, 2002, 22(3): 88-93. [3]胡宗波;张波.;同步整流器中MOSFET的双向导电特性和整流损耗研究[J]
AC-DC，DC-DC?，Thyristors ，Diodes，HEXFET Power MOSFETs? DC转换器?，半导体闸流管，二极管，场效应晶体管
A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz. 采用硅栅结构的自对准离子注入工艺，研制成功了源漏击穿电压BVDS为120V、输出功率5.;1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。
The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons. 用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
In this paper, the principle, system stucture and the design of both hardware and software of a kind of power MOSFET the meaning of the test apparatus are introduced, which is based upon MCU. 摘要介绍了以单片机为核心的功率MOSFET测试仪的原理、系统结构及具体的软硬件设计。
The effective management of charging and discharging the storage battery is accomplished by 16-bit microcomputer and the high power MOSFET of Germany IXYS Company is used in the main circuit. 蓄电池充放电的有效地管理通过16位微处理器实现，主电路的功率器件采用德国IXYS公司的大功率场效应管。
Main circuit uses independent RC pulse generator and control circuit can control the main circuit based on 8051 single chip microcomputer and TC4427 high-speed power MOSFET driver. 其主电路采用了独立式RC脉冲放电回路,控制电路则通过8051单片机和TC4427高速MOSFET驱动器完成对主电路的控制。
The king was shorn of his power by his nobles. 国王被手下的贵族们剥夺了权力。
Current Sensing Approach to Power MOSFET in SPIC 灵巧功率集成电路中功率MOSFET电流感知方法的研究