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- epitaxial susceptor 外延用衬托器
- A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. 揭示了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的衬托器。
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111)//Si(111). Er2O3薄膜在Si（111）上的外延关系为Er2O3（111）//Si（111）。
- Chapter Two devotes to study the epitaxial growth of ultra-thin metal films. 第三章：用动力学蒙特卡罗模拟研究表面剂诱导外延中二维岛的形成。
- BST thin films sol gel technique epitaxial growth electrical properties. 标 签 薄膜 溶胶-凝胶工艺 外延生长 电性能.
- The susceptor rested on a pedestal whose shaft is connected to a motor that provides rotation. 感应器安装在轴承台上，它的支架与提供旋转的马达相接。
- A semiconductor fabrication reactor (12) comprises a rotatable susceptor (14) mounted to the top of a reactor chamber. 一种半导体制作反应器(12)，它包括一安装在反应室顶部且可旋转的基座(14)。
- AMPK not only can be considered as energy susceptor in cell level,but also can regulate the energy consumption and energy intake by some... 文章仅就AMPK介导运动、二甲双胍、噻唑烷二酮类、瘦素和脂联素等对胰岛素抵抗的改善简要概述。
- A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention. 还揭示了采用根据本发明的衬托器的有机金属化学汽相沉积反应器。
- A heater (18) heats the susceptor and a chamber gas inlet allows semiconductor growth gases into the reactor chamber to deposit semiconductor material on said wafers. 一加热器(18)加热基座，而一入气口使半导体生长气体进入反应室，以在所述芯片上沉积半导体物质。
- A complication is that the films are strained and epitaxial, with hardly any defects. 一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。
- The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. 该衬托器包括由高温时较低热传导率的材料制成的基部结构，并具有一个或多个板孔以容纳传热插塞。
- Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
- It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS). 也发现藉由条状蓝宝石基板横向磊晶法(LEPS)，可以提升发光二极体的输出功率。
- High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO_(2~)-patterned GaN "template". 在有条状SiO2 图形的GaN“模板”上,侧向外延方法生长了高质量的GaN。
- In this paper, we presented the epitaxial growth of CeO2 thin film on cube textured Ni5W substrates by MOD method. 本文采用MOD方法,以有机铈盐配制前驱溶液,在立方织构的Ni-5%25(原子分数)W基底上制备了CeO2过渡层。
- Bede RADS stands for rocking curve analysis of semiconductor and epitaxial crystal structure by dynamical simulation. 应用Bede RADS软件对半导体和外延层晶体结构的摇摆曲线进行动态模拟。
- The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings. 四探针法用在非常薄的样品，例如外延晶圆片和导电涂层上。
