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planar epitaxial phototransistor 平面外延光电晶体管
epitaxial phototransistor 外延光电晶体管
N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
Reflection of a beam of light on the diaphragm falls on a phototransistor. 经膜片反射的光束照射到光敏管上。
UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
diffused-base epitaxial mesa phototransistor 扩散基极外延台面式光电晶体管
epitaxial diffused phototransistor 外延扩散型光电二极管
The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111)//Si(111). Er2O3薄膜在Si（111）上的外延关系为Er2O3（111）//Si（111）。
Chapter Two devotes to study the epitaxial growth of ultra-thin metal films. 第三章：用动力学蒙特卡罗模拟研究表面剂诱导外延中二维岛的形成。
BST thin films sol gel technique epitaxial growth electrical properties. 标签薄膜溶胶-凝胶工艺外延生长电性能.
As the day slowly progresses, state C is reached shortly, turning on the right phototransistor. 左光电是开启的，造成了一个信号，使电动机的阴影不断，直到从板返回跟踪到B国随着时间慢慢进步， C国达成不久，把右边光电。
Hybrid optical bistable laser is composed of phototransistor and semiconductorlaser diode. Based on this bistable laser,AND. NOR. 用半导体激光器和光晶体管组成了组合光双稳激光器;以不同的电路结构实现了与、或、非、与非、或非光逻辑门.
The Design project with the main use of AD590 and phototransistor as a test unit has still used the MC14433, 74LS160, such as integrated device. 设计方案中，主要采用AD590和光敏三极管作为检测单元，并运用了MC14433、74LS160等集成器件。
The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out. 该光敏三极管是通过安装在洞上方的情况下，密封在一个黄铜管，这是手绘的黑色内。
A complication is that the films are strained and epitaxial, with hardly any defects. 一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。
Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS). 也发现藉由条状蓝宝石基板横向磊晶法(LEPS)，可以提升发光二极体的输出功率。
High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO_(2~)-patterned GaN "template". 在有条状SiO2 图形的GaN“模板”上,侧向外延方法生长了高质量的GaN。
In this paper, we presented the epitaxial growth of CeO2 thin film on cube textured Ni5W substrates by MOD method. 本文采用MOD方法,以有机铈盐配制前驱溶液,在立方织构的Ni-5%25(原子分数)W基底上制备了CeO2过渡层。
Bede RADS stands for rocking curve analysis of semiconductor and epitaxial crystal structure by dynamical simulation. 应用Bede RADS软件对半导体和外延层晶体结构的摇摆曲线进行动态模拟。