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Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Solid Electrical Insulating Materials at Commercial Power Frequencies (10. 固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法(10。
Test Method for Dielectric Breakdown Voltage of Insulating Oils of Petroleum Origin Under Impulse Conditions 在脉冲条件下石油成因的绝缘油的电介质击穿电压的试验方法
Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes 用圆盘电极测定电绝缘液体介电击穿电压的试验方法
Standard Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Insulating Gases at Commercial Power Frequencies 在工业用电频率时绝缘气体介电击穿电压和介电强度的测试方法
Standard Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Solid Electrical Insulating Materials at Commercial Power Frequencies 固体电绝缘材料在商用电源频率下的介电击穿电压和介电强度的标准试验方法
Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Solid Electrical Insulating Materials Under Direct-Voltage Stress 在直流电压作用下固体电绝缘材料的介电击穿电压及介电强度的试验方法
Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Solid Electrical Insulating Materials Using Impulse Waves 用脉冲波法测定固体电绝缘材料的电介质击穿电压及抗电强度的试验方法
dielectric breakdown voltage 电介质击穿电压,电介质哗电压
In the case of dielectric breakdown, a different type of acceleration occurs. 在介质击穿的情况下，出现了一种不同类型的加速。
Besides solving legal requirements, a lower intermediate voltage bus reduces problems with dielectric breakdown, arcing, and improves the safety of service people working with lighting. 包括法律要求在内，一个低中间电压总线降低了电介质击穿和电弧问题，使维修人员的的工作更安全。
Features: High breakdown voltage, low output capacitance, high fT. 特点:高击穿电压,低输出电容,特征频率高。
Purpose: Color TV chroma output and high breakdown voltage driver. 用途:用于彩电行输出和高击穿电压驱动。
A state monitoring method of power cable based on the analysis of dielectric breakdown characteristic was presented. 摘要在对绝缘介质击穿特性分析的基础上提出了一种电力电缆状态监测方法。
The short-pulsed liquid dielectric breakdown characteristic is the basis of the application of pulse-power technique. 快脉冲下液体绝缘介质击穿特性是脉冲功率技术应用的基础。
Features: High breakdown voltage, excellent current characteristics. 特点：击穿电压高，电流特性好。
Failure mechanisms, such as hot-carrier effect (HCE), dielectric breakdown, electro-static discharge (ESD) and electromigration, pose serious threat to the long-term reliability of VLSI circuits. 热载流子效应(HCE)、电介质击穿、静电放电,以及电迁移等失效机理,已经对VLSI电路的长期可靠性造成了极大的威胁。
Test results show that the corona's onset and breakdown voltage both rise with increasing OD of the nozzle. 结果表明:喷嘴外径增大,起晕电压和击穿电压升高。
The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 respectively). 钳位缓冲电路被设定在场效应晶体管的额定击穿电压上（分别为600伏特和800伏特）。
Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized. 模拟结果显示，该结构可以使射频功率双极性晶体管的击穿电压几乎100%25达到平行平面结的理想值。
If the critical reverse breakdown voltage is exceeded, a destructive breakdown occurs. 如果超过临界反向击穿电压，就会发生破坏性的击穿。