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closed quantum wells 闭腔光量子阱
GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
New progress of exciton condensation in coupled quantum wells[J]. 引用该论文闫占彪;郭震宁.
Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文谭鹏;路洪.
Optical bistabilities in ZnSe/ZnS multiple quantum wells at low temperature[J]. 引用该论文刘玉东;李淳飞;申德振;范希武;范广涵;陈连春.
Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文张福厚;宋珂;邢建平;郝修田;曾一平.
Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文王得勇;刘杰;贾金锋;刘洪;薛其坤.
E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
This spring is a key part for ensuring normal operating of ACAD.Stress and beforehand close quantum of rectangle spring is educed by some conclusions of mechanics of materials and compute formula. 3. 该弹簧是保证制动间隙自调机构正常工作的关键件，本文从材料力学的结论出发，详尽地推导了该弹簧应力及其初始预紧量的设置，并给出它们的计算公式。
A NEW TYPE OF SPACIAL MODULATION SPECTROSCOPYAPPLIED IN SEMICONDUCTOR SUPERLATTICES QUANTUM WELLS? 新的空间调制光谱技术在半导体超晶格量子阱中的应用?
SiGe multi quantum wells normal incidence intersubband absorption dispersion effect. 标签硅锗多量子阱垂直方向子带间吸收色散效应.
Quantum wells intermixing (QWI) is demonstrated byphotoluminescent (PL) spectrum. 通过光荧光谱(PL)的测量,证明有量子阱混合现象产生。
Femtosecond relaxation of excited carriers in AlGaAs/GaAs multiple quantum wells[J]. 引用该论文林位株;丘志仁;徐文成.
Study on GaAs/AlGaAs multiple quantum wells irradiated by free electron laser and OTCS measurement[J]. 引用该论文邹睿;林理彬;张猛;张国庆;李永贵.
On the growth of GaAsSb/GaAs quantum wells, GaAsSb/GaAs quantum wells were grown on GaAs substrates. 在锑砷化镓/砷化镓量子井的成长方面，尝试在砷化镓基板上成长锑砷化镓/砷化镓量子井。
Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。