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Band gap width of sulfide mineral, work function, adsorption of reagents, solution property and ion streng th of solution can affect edge level of sulfide mineral. 矿物的禁带宽度、功函数、药剂吸附、溶液性质以及离子强度等因素能够改变矿物边缘能级的大小。
The calculated results obviously show that band gap exists.Band gap width is related to Polarization of incident ray, cylinder's index of refraction and the existence of defects. 计算结果表明，对于一定的入射方向，某些频率的光不能在光子晶体中传播即出现所谓的带隙，带隙的宽度与入射光的偏振、圆柱的折射率、有无缺陷等因素有关。
The Si-SiO_2 composite and Si inverse opal have three photonic band gaps lying in band2-band3, band5-band6,band8-band9. The gap width between band5-band6 is relatively narrow. Si-SiO2复合体与Si反Opal垂直(111)面入射时,在较高的填充率下存在三个光学带隙,分别位于band2-band3、band5-band6、band8-Band9,其中band2-band3之间的带隙较宽,band5-band6之间的带隙较窄,band8-band9之间的带隙会产生完全带隙。
A novel BWO with photonic band gap structure[J]. 引用该论文陈波;钱宝良;钟辉煌.
For a certain radius and filling fraction, the width of the first band gap is the largest when the other radii are equal. 当确定椭球体的某一个半径和填充率时，第一禁带的最大值出现在另2个半径相等的情况下。
To change the space between the charts, increase or decrease the number in the Gap width box. 若要更改图表之间的空白,请增大或减小“分类间距”框中的数字。
Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
An energy controllable ECM pulse generator which machining gap appearance changes with the detected EUM current variable is developed, to make the electrolysis thickness of ECM and machining gap width of the diamond controllable. 用检测电流的方法，设计和研制随间隙状态变化能量可控的脉冲电解电源，用于金刚石节块电解修刃，以实现电解电蚀层厚度的基本可控，从而可实际控制金刚石的出刃高度。
The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
Some examples prove the influence of different gap width on dynamic response of gapped piping. 给出了不同间隙对管系动力响应影响的算例。
The situation and width of band gaps with diverse angle of incidence are analyzed, and peculiar phenomenon is numerically simulated that band gaps disappear at the Brewster'angle. 分析了入射角度对禁带位置以及宽度的影响,并模拟了入射角度处于布儒斯特角时禁带消失的特殊情况;
The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二维光子晶体中引入点缺陷后,在光子晶体禁带中会有共振模出现;
The band gap's broaden is apparent when the larger refractive index layer is graded. 改变高折射率层的几何厚度，光子带隙的拓宽更为显著。
Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。