While the (110)-texture PZT film with a large number of 90O ferroelectric domains occurance was believed not to meet the NVFRAM devices demands due to the ferroelectirc fatigue pinned by 90O domain wall.

• 而在(110)取向的PZT 薄膜中观察到大量明暗交错的90O电畴。 由于90O电畴中畴壁处的“钉扎”效应会导致强烈的铁电疲劳性,(110)取向的PZT 薄膜不易用于铁电器件的制备。