We have attained 2-inch and 3-inch silicon(Si) doped single crystal with crystal length of 10cm by vertical Bridgman(VB) mothod.

• 我们采用垂直布里奇曼(VB)法分别得到了2英寸和3英寸的GaAs单晶,单晶长度可达10cm,平均位错密度5000cm-2。