Using these silicon films as the intrinsic layer,p-i-n solar cells were prepared on SnO2 substrates. The open circuit voltage(Voc) was 0.891V.

• 以这部分材料作为太阳电池的本征层；在SnO2衬底上制备了p-i-n型太阳电池；电池的初始开路电压(Voc)达到了0.；891V。