Using high frequency(1MHz)capacitance voltage( C V )test and the infrared(IR) spectroscopy,the effect of the deposition condition on the interfacial properties of the CVD SiO 2 formed by the vacuum ultraviolet(VUV)light is studied.
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采用高频(1MHz)C-V测试和红外谱,研究了工艺参数对Xe激发真空紫外光直接光CVDSiO2的SiO2/Si界面特性的影响。
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