Using high frequency(1MHz)capacitance voltage( C V )test and the infrared(IR) spectroscopy,the effect of the deposition condition on the interfacial properties of the CVD SiO 2 formed by the vacuum ultraviolet(VUV)light is studied.

• 采用高频（1MHz）C－V测试和红外谱，研究了工艺参数对Xe激发真空紫外光直接光CVDSiO2的SiO2/Si界面特性的影响。