Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated.

• 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ；并对其性质进行了研究 .