Through optimization of excitation parameters of the glow-discharge source and calculation of the sputtering rate of the certified reference materials, a method for the quantitative surface analysis of nc-Si:H film was established.
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方法应用于实际掺杂纳米硅薄膜样品的分析,并将分析深度、剖析结果与表面形貌仪的结果进行了对照。
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