This thesis reports the analysis of the Gate-Source/Drainand Source/Drain-Gate capacitance behavior of narrow channel FD SOI NMOS Device considering the fringing capacitance.

• 本论文提出考虑边缘电容对于窄通道完全解离绝缘体上矽N型金氧半元件的闸-源/汲极及源/汲-闸极电容行为之分析。