This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power,V(O2)/V(Ar) ratio and substrate temperature.
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释义
研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。
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