This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model to be extracted, which is for short channel MOS Field Effect transistor specially.

• 本论文选取目前业界占主流地位的BSIM3(Berkeley short-channel IGFET model)为将要提取的模型，它是专门为短沟道MOS场效应晶体管而开发的一种模型。