This calculation is based on the drift-diffusion model that contains charge carrier drift with field dependent mobility, thermionic emission, heterojunction interface and recombination process.

• 这个程式的基础是载子漂移和扩散模型，该模型考虑：（1）与电场相关的载子迁移率，（2）载子由金属电极注入有机层或于有机层间迁移，（3）载子在有机层传输及复合。