This amplifier comprises two low-noise GaAs FET transistors cx50 B mounted on a metallized dielectric plate placed in an enclosure (100X60X40mm3).

• 该放大器是由两个低噪声砷化镓场效应晶体管C×50B组成,制作在金属化了的聚四氟乙烯介质板上,并装在一个100×60×40mm~3的盒里。