Then, it is investigated that the interaction of the two reliability problems CHC and ESD in VLSI. Especially, the tradeoff of CHC and ESD in drain/source engineering and the latent damage is discussed in detail.

• 重点讨论了超大规模集成 (VL SI)中两个可靠性问题沟道热载流子 (CHC)退化与静电释放 (ESD)之间的相互作用 ,特别是漏 /源工艺上的均衡和潜在的损伤。