The thicknesses of the layers between the active region and the ridge waveguide are optimized by taking into account the injected carrier distribution and local material gain in the SLD cross section.
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释义
考虑了注入载流子横向分布的不均匀,较准确地计算了模式增益。结果表明,通过对残留层和上光限制层厚度的优化,可以有效提高SLD与单模光纤的耦合功率。
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