The superhard Ti-B films were performed on p-type Si(100) substrates by ion beam enhanced deposition, with varying deposition rate and Xe ion beam energies.

• 采用离子束增强沉积方法，在p型（100）单晶硅衬底上，通过不同能量的氙离子辅助轰击，以不同的沉积速率制备了Ti－B超硬薄膜。