The simulation result shows that complementary ISFET/MOSFET pair can eliminate temperature drift and Si substrate bulk effect, which proves it is a suitable readout circuit for ISFET integration.

• 模拟仿真的结果表明，所采用的ISFET/MOSFET“互补对”结构的信号读取电路形式能够抑制“温漂”和克服“矽衬底体效应”对器件测量灵敏度的影响，是一种适用于ISFET集成设计的信号读取方式。