The simulation of electrical field results verified that the enhancement of P/E efficiency in NW SONOS-TFT is mainly attributed to the large number of corners and their corner effect.

• 由电场模拟结果验证，奈米线结构SONOS-TFT的写入/抹除效率之改善，主要是由于较多的转角数目及其转角效应所贡献。