The shear strain and strain of MBE grown CdTe(211)B epilayers on 3inch Si(211) substrates are measured using reciprocal space maps in the symmetric and asymmetric reflection by high resolution X-ray diffraction.
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文章利用高分辨率X射线衍射技术对分子束外延CdTe(211)B/Si(211)材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的对称衍射面和非对称衍射面的倒易空间图,对CdTe外延层的剪切应变和正应变状况进行了分析。
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