The results show that CdS thin films fabricated by ILGAR method are uniform,compact and good in adhesion to substrate, and growth ratio of the film is 2.8 nm/cycle as [Cd2+]=0.05M.
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ILGAR法制备CdS薄膜的实验结果表明;以CdCl2为反应物;H2O和CH3CN混合液为溶剂;H2S为硫源所得纳米晶薄膜表面较致密、均匀、附着性好; 0.;05M阳离子浓度吸附下的平均生长速率为2
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