The results of Auger Electron Spectroscopy (AES) and Energy Dispersive Analysis X-ray Spectroscopy(EDAS) measurements show that the interface layer contains Au-Ga intermetallic compound and impurity P,Si.

• 借助俄歇能谱(AES)和能量色散谱(EDAS)初步分析了Au-Si/n-GaP系统接触的界面含有Au-Ga金属间化合物以及P和Si杂质。